|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
WTC2310 N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 3 AMPERS DRAIN SOUCE VOLTAGE 60 VOLTAGE Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<90m@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23 ( Maximum Ratings(TA=25 Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@10V(TA ,VGS@10V(TA Pulsed Drain Current1,2 Total Power Dissipation(TA=25 ) Maximum Junction-ambient3 Unless Otherwise Specified) Symbol VDS VGS ID IDM PD R JA Value 60 Unit V 20 3.0 2.3 10 1.38 90 -55~+150 W /W A Operating Junction and Storage Temperature Range TJ, Tstg Device Marking WT 2310=2310 http:www.weitron.com.tw WEITRON 1/6 05-May-05 WTC2310 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=250A Gate-Source Threshold Voltage VDS=VGS,ID=250A Gate-Source Leakage Current VGS= 20V Drain-Source Leakage Current(Tj=25) VDS=60V,VGS=0 Drain-Source Leakage Current(Tj=70) VDS=48V,VGS=0 Drain-Source On-Resistance VGS=10V,ID=3A VGS=4.5V,ID=2A Forward Transconductance VDS=5V,ID=3 A gfs RDS(on) 5.0 90 120 m IDSS 25 V(BR)DSS VGS(Th) IGSS 60 1.0 V 3.0 nA 100 10 A S Dynamic Input Capacitance VGS=0V,VDS=25V,f=1.0MHz Output Capacitance VGS=0V,VDS=25V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=25V,f=1.0MHz Ciss Coss Crss 490 55 40 780 pF http:www.weitron.com.tw WEITRON 2/6 05-May-05 WTC2310 Switching Turn-on Delay Time2 VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Rise Time VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Turn-off Delay Time VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Fall Time VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Total Gate Charge2 VDS=48V,VGS=4.5V,ID=3A Gate-Source Charge VDS=48V,VGS=4.5V,ID=3A Gate-Drain Change VDS=48V,VGS=4.5V,ID=3A td(on) 6 5 16 3 6 1.6 3 ns td (off) 10 nC tr tf Qg Qgs Qgd Source-Drain Diode Characteristics Forward On Voltage2 VGS=0V,IS=1.2A VSD - 25 26 1.2 - V ns nC Reverse Recovery Time VGS=0V,IS=3A, dl/dt=100A/s Reverse Recovery Charge VGS=0V,IS=3.9A,dl/dt=100A/s Trr Qrr Note: 1. Pulse width limited by max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min, copper pad. WEITRON http://www.weitron.com.tw 3/6 05-May-05 WTC2310 10 10 8 TA=25C 10V 7.0V TA=150C 10V 7.0V 5.0V 4.5V 8 ID ,DRAIN CURRENT (A) 4.5V ID ,Drain Current (A) 5.0V 6 VG=3.0V 6 VG=3.0V 4 4 2 2 0 0 0 1 2 3 4 5 0 1 2 3 4 5 FIG.1 Typical Output Characteristics 105 99 93 2.0 VDS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics VDS ,Drain-to-source Voltage(V) ID = 2A TA = 25C Normalized RDs(on) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = 3A VG = 10V RDs(on) (m) 87 81 75 2 Fig.3 On-Resistance v.s. Gate Voltage 4 1.4 1.2 VGS ,Gate-to-source Voltage(V) 4 6 8 10 0 50 100 150 Fig.4 Normalized OnResistance Tj ,Junction Temperature(C) 3 Normalized VGS(th)(V) 1.2 1.0 2 Tj = 150C Tj = 25C Is ( A ) 0.8 0.6 1 0 0 0.2 Fig.5 Forward Characteristics of Reverse Diode VDS ,Source-to-Drain Voltage(V) 0.4 0.6 0.8 1 0.4 -50 Fig.6 Gate Threshold Voltage v.s. Junction Temperature Tj ,Junction Temperature(C) 0 50 100 150 WEITRON http://www.weitron.com.tw 4/6 05-May-05 WTC2310 14 1000 f = 1.0MHz VGS , Gate to Source Voltage(V) 12 10 8 6 4 2 0 ID = 3A VDS = 30V VDS = 38V VDS = 48V C(pF) 100 Ciss Coss Crss 0 3 6 9 12 15 0 1 5 9 13 17 21 25 29 Fig 7. Gate Charge Characteristics 100,000 QG , Total Gate Charge(nC) VDS, Drain-to-Source Voltage(V) Fig 8. Typical Capacitance Characteristics 1 Duty factor = 0.5 0.2 10,00 100us 1,000 Normalized Thermal Response(R ja) 0.1 0.1 0.05 PDM ID(A) 1ms 0.100 10ms 100ms 0.01 0.01 t T 0.010 TA = 25C Single Pulse 0.1 1 10 Is DC Duty factor = t / T Peak Tj=PDM x R ju + Tu R ja=270C / W Single pulse 0.001 0.001 VDS , Drain-to-Source Voltage(V) 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 t, Pulse Width(s) Fig 9. Maximum Safe Operation Area VDS 90% Fig 10. Effective Transient Thermal Impedance VG QG QGS QGD 4.5V 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Circuit Fig.12 Gate Charge Waveform WEITRON http://www.weitron.com.tw 5/6 05-May-05 WTC2310 SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 6/6 05-May-05 |
Price & Availability of WTC2310 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |